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HYB314171BJ-50 - 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

Download the HYB314171BJ-50 datasheet PDF. This datasheet also covers the HYB-314 variant, as both devices belong to the same 3.3v 256 k x 16-bit dynamic ram 3.3v low power 256 k x 16-bit dynamic ram with self refresh family and are provided as variant models within a single manufacturer datasheet.

Description

3.3V 50ns 256 K x 16 DRAM 3.3V 60 ns 256 K x 16 DRAM 3.3V 70 ns 256 K x 16 DRAM 3.3V 50 ns 256 K x 16 DRAM 3.3V 60 ns 256 K x 16 DRAM 3.3V 70 ns 256 K x 16 DRAM Pin Names A0-A8 RAS UCAS, LCAS WE OE I/O1 I/O16 Address Inputs Row Address Strobe Column Address Strobe Read/Write Input Output

Features

  • include Self Refresh (LVersion), single + 3.3 V (± 0.3 V) power supply, direct interfacing with high performance logic device families. Semiconductor Group 1 7.96 HYB 314171BJ/BJL-50/-60/-70 3.3V 256 K x 16-DRAM Ordering Information Type HYB 314171BJ-50 HYB 314171BJ-60 HYB 314171BJ-70 HYB 314171BJL-50 HYB 314171BJL-60 HYB 314171BJL-70 Truth Table RAS H L L L L L L L L LCAS H H L H L L H L L UCAS H H H L L H L L L WE H H H H H L L L H OE H H L L L H H H H I/O1-I/O8 High-Z High-Z Dout High-Z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HYB-314-171.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB314171BJ-60 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-70 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-50 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-60 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJL-70 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

Full PDF Text Transcription

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3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 314171BJ-50/-60/-70 HYB 314171BJL-50/-60/-70 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) 70 ns (-70 version) CAS access time: 15ns (-50,-60 version) 20 ns (-70 version) Cycle time: 95 ns (-50 version) 110 ns (-60 version) 130 ns (-70 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) Single + 3.3 V (± 0.3 V) supply with a builtin VBB generator • • • • • • • • • • • • • • Low Power dissipation max. 450 mW active (-50 version) max. 378 mW active (-60 version) max.
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