Datasheet4U Logo Datasheet4U.com

HYB3117805BSJ-60 - 2M x 8-Bit Dynamic RAM 2k Refresh

Description

5V 5V 50 ns EDO-DRAM 60 ns EDO-DRAM 3.3 V 50 ns EDO-DRAM 3.3 V 60 ns EDO-DRAM Pin Names and Configuration A0 - A10 A0 - A9 RAS OE I/O1 - I/O8 CAS WE Row Address Inputs Column Address Inputs Row Address Strobe Output Enable Data Input/Output Column Address Strobe Read/Write Input Power Supply + 5

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HYB39S128160CT 128-MBit Synchronous DRAM Infineon Technologies
HYB39S128160CTL 128-MBit Synchronous DRAM Infineon Technologies
HYB39S128160FE 128-MBit Synchronous DRAM Qimonda
HYB39S128160FEL 128-MBit Synchronous DRAM Qimonda
HYB39S128160FT 128-MBit Synchronous DRAM Qimonda

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3117805BSJ-50 2M x 8-Bit Dynamic RAM 2k Refresh
HYB3117805BJ-50 2M x 8 - Bit Dynamic RAM
HYB3117805BJ-60 2M x 8 - Bit Dynamic RAM
HYB3117805BJ-70 2M x 8 - Bit Dynamic RAM
HYB3117800BSJ-50 2M x 8-Bit Dynamic RAM

Full PDF Text Transcription

Click to expand full text
2M × 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO) Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance: -50 -60 60 15 30 104 25 HYB 5117805/BSJ-50/-60 HYB 3117805/BSJ-50/-60 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 ns ns ns ns ns • Power dissipation: HYB 5117805 -50 Power Supply Active TTL Standby CMOS Standby 440 11 5.5 -60 385 5 ± 10% HYB 3117805 -50 288 7.2 3.6 -60 252 mW mW mW 3.3 ± 0.3 V • Read, write, read-modify-write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode • All inputs, outputs and clocks fully TTL (5 V versions) and LV-TTL (3.
Published: |