Datasheet4U Logo Datasheet4U.com

HYB3117405BT-50 - 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns)

Features

  • include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families. The HYB3116405BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117405BJ-50 HYB 3117405BJ-60 HYB 3117405BJ-70 HYB 3117405BT-50 HYB 3117405BT-60 HYB 3117405BT-70 HYB 3116405BJ-50 HYB 3116405BJ-60 HYB 3116405BJ-70 HYB 3116405BT-50 HYB 3116405BT-60 HYB 3116405BT-70 HYB 3116405BTL-50 HYB 3116405BTL-60 HYB 3116405BTL-70 Q67100-Q1143 Q67100.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HYB39S128160CT 128-MBit Synchronous DRAM Infineon Technologies
HYB39S128160CTL 128-MBit Synchronous DRAM Infineon Technologies
HYB39S128160FE 128-MBit Synchronous DRAM Qimonda
HYB39S128160FEL 128-MBit Synchronous DRAM Qimonda
HYB39S128160FT 128-MBit Synchronous DRAM Qimonda

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3117405BT-60 3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BT-70 3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BJ-50 3.3V 4M x 4-Bit EDO-Dynamic RAM
HYB3117405BJ-60 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3117405BJ-70 3.3V 4M x 4-Bit EDO-Dynamic RAM

Full PDF Text Transcription

Click to expand full text
3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT(L) -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • • • • • • • Single + 3.3 V (± 0.3V ) supply Low power dissipation max. 396 active mW (HYB3117405BJ/BT-50) max. 363 active mW (HYB3117405BJ/BT-60) max. 330 active mW (HYB3117405BJ/BT-70) max. 360 active mW (HYB3116405BJ/BT-50) max. 324 active mW (HYB3116405BJ/BT-60) max. 288 active mW (HYB3116405BJ/BT-70) 7.2 mW standby (LV-TTL) 3.
Published: |