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BTS734L1 - Smart Two Channel Highside Power Switch

Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.

Fully protected by embedded protection functions.

Features

  • Overload protection.
  • Current limitation.
  • Short-circuit protection.
  • Thermal shutdown.
  • Overvoltage protection (including load dump).
  • Fast demagnetization of inductive loads.
  • Reverse battery protection1).
  • Undervoltage and overvoltage shutdown with auto-restart and hysteresis.
  • Open drain diagnostic output.
  • Open load detection in ON-state.
  • CMOS compatible input.
  • Loss of ground and loss of Vbb.

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Full PDF Text Transcription

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PROFET® BTS 734 L1 Smart Two Channel Highside Power Switch Features • Overload protection • Current limitation • Short-circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Product Summary Overvoltage Protection Operating voltage active channels: On-state resistance RON Nominal load current IL(NOM) Current limitation IL(SCr) Vbb(AZ) Vbb(on) one 40 4.8 19 43 V 5.0 ... 34 V two parallel 20 mΩ 7.
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