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BTS133 - Smart Lowside Power Switch

General Description

N channel vertical power FET in Smart SIPMOS ® chip on chip technology.

Fully protected by embedded protected functions.

Key Features

  • Logic Level Input.
  • Input Protection (ESD).
  • Thermal Shutdown.
  • Overload protection.
  • Short circuit protection.
  • Overvoltage protection.
  • Current limitation.
  • Status feedback with external input resistor.
  • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 50 21 7 V mΩ A A 2000 mJ.

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BTS133 Smart Low Side Power Switch Infineon Technologies AG
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Other Datasheets by Siemens Semiconductor Group (now Infineon)

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BTS130 MOSFET
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BTS132 MOSFET
BTS100 Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)
BTS110 N-channel Enhancement mode Temperature sensor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HITFET® BTS 133 Smart Lowside Power Switch Features • Logic Level Input • Input Protection (ESD) • Thermal Shutdown • Overload protection • Short circuit protection • Overvoltage protection • Current limitation • Status feedback with external input resistor • Analog driving possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 50 21 7 V mΩ A A 2000 mJ Application • All kinds of resistive, inductive and capacitive loads in switching or linear applications • µC compatible power switch for 12 V and 24 V DC applications • Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS ® chip on chip technology.