Click to expand full text
BSM300GA120DN2E3166
IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM300GA120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package SINGLE SWITCH 1
Ordering Code C67070-A2007-A70
1200V 430A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 430 300
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
860 600
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
2500
W + 150 -55 ... + 150 ≤ 0.05 ≤ 0.
BSM300GA120DN2E3166 Datasheet
