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BSM150GAL120DN2E3166
IGBT Power Module
• Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate
Type
VCE
IC
Package
Ordering Code
BSM150GAL120DN2E3166 1200V 210A Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
HALF BRIDGE GAL 2 C67076-A2112-A70
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 210 150
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
420 300
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1250
W + 150 -55 ... + 150 ≤ 0.1 ≤ 0.25 ≤ 0.
BSM150GAL120DN2E3166 Datasheet
