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BPX90 - Silizium-Fotodiode Silicon Photodiode

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur (Lötstelle 2 mm vom Gehäuse entfernt bei Lötzeit t ≤ 3 s) Soldering temperature in 2 mm distance from case bottom (t ≤ 3 s) Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Sym

Features

  • q Especially suitable for.

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Full PDF Text Transcription (Reference)

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BPX 90 BPX 90 F Silizium-Fotodiode Silicon Photodiode BPX 90 BPX 90 F Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm (BPX 90) und bei 950 nm (BPX 90 F) q Hohe Fotoempfindlichkeit q DIL-Plastikbauform mit hoher Packungsdichte Anwendungen q Industrieelektronik q “Messen/Steuern/Regeln” Features q Especially suitable for applications from 400 nm to 1100 nm (BPX 90) and of 950 nm (BPX 90 F) q High photosensitivity q DIL plastic package with high packing density Applications q Industrial electronics q For control and drive circuits Typ Type BPX 90 BPX 90 F Bestellnummer Ordering Code Q62702-P47 Q62702-P928 Semiconductor Group 1 01.
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