Datasheet4U Logo Datasheet4U.com

BFS481 - NPN Silicon RF Transistor

📥 Download Datasheet

📁 Similar Datasheet

  • BFS481 - Low Noise Silicon Bipolar RF Transistor (Infineon Technologies AG)
  • BFS480 - NPN Silicon RF Transistor (Infineon Technologies AG)
  • BFS482 - NPN Silicon RF Transistor (Infineon Technologies AG)
  • BFS483 - Low Noise Silicon Bipolar RF Transistor (Infineon Technologies AG)
  • BFS460L6 - NPN Silicon RF TWIN Transistor (Infineon Technologies AG)
  • BFS466L6 - NPN Silicon RF TWIN Transistor (Infineon Technologies AG)
  • BFS17 - NPN 1GHz wideband transistor (NXP)
  • BFS17 - Silicon NPN Planar RF Transistor (Vishay Telefunken)
  • BFS17 - RF TRANSISTOR (Motorola)
  • BFS17 - NPN small signal transistor (ROHM)
Other Datasheets by Siemens Semiconductor Group
  • BFS480 - NPN Silicon RF Transistor
  • BFS482 - NPN Silicon RF Transistor
  • BFS483 - NPN Silicon RF Transistor
  • BFS17P - NPN Silicon RF Transistor
  • BFS17S - NPN Silicon RF Transistor
  • BFS17W - NPN Silicon RF Transistor
  • BFS18 - NPN Silicon RF Transistor
  • BFS18R - NPN Silicon RF Transistor

Full PDF Text Transcription

Click to expand full text
BFS 481 NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fT = 8 GHz F = 1.4 dB at 900 MHz • Two (galvanic) internal isolated Transistors in one package ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 481 RFs Q62702-F1572 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 20 2 mW 175 150 - 65 ... + 150 - 65 ...
Published: |