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BF660W - PNP Silicon RF Transistor

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BF 660W PNP Silicon RF Transistor • For VHF oscillator applications Type BF 660W Marking Ordering Code LEs Q62702-F1568 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 30 40 4 25 5 mW 280 150 - 65 ... + 150 °C mA Unit V VCEO VCBO VEBO IC IB Ptot Tj Tstg TS ≤ 93 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 205 K/W Semiconductor Group 1 Aug-14-1996 BF 660W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max.
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