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BCR 141S
NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)
Type BCR 141S
Marking Ordering Code Pin Configuration WDs
Package
Q62702-C2416 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 10 30 100 250 150 - 65 ... + 150 mA mW °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
RthJA RthJS
≤ 275 ≤ 140
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.
BCR141S Datasheet
