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BAR81 - Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

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BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss Type BAR 81 Marking Ordering Code BBs Q62702Q62702-A1145 Pin Configuration 1=C 2=A 3=C 4=A Package MW-4 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 ... + 125 - 55 ... + 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-26-1996 BAR 81 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 0.93 20 nA V 1 VR = 20 V, TA = 25 °C Forward voltage VF IF = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.7 0.
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