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P1B90VX3K
Power MOSFETs 900V, 1A, N-channel
Feature
N-channel SMD High Voltage (900V) Low Capacitance High Avalanche Durability, High di/dt Durability Based on AEC-Q101 Halogen free Pb free terminal RoHS:Yes
OUTLINE
Package (House Name): FB Package (JEDEC Code): TO-252AA
Equivalent circuit
Absolute Maximum Ratings (unless otherwise specified : Tc=25℃)
Item Storage temperature Channel tempertature Drain-source voltage Gate-source voltage Continuous drain current(DC) Continuous drain current(Peak) Continuous source current(DC) Total power dissipation Repetitive avalanche current Single avalanche energy Repetitive avalanche energy Drain‐source diode di/dt strength
Symbol
Conditions
Tstg
Tch
VDSS
VGSS
ID
IDP
Pulse width 10μs, duty=1/100
Is
PT
IAR
Starting Tch=25℃ Tch≦150℃
EAS
P1B90VX3K Datasheet
