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LH5116H - CMOS 16K (2K x 8) Static RAM

Description

The LH5116/H are static RAMs organized as 2,048 × 8 bits.

It is fabricated using silicon-gate CMOS process technology.

Features

  • 2,048 × 8 bit organization.
  • Access time: 100 ns (MAX. ).
  • Power consumption: Operating: 220 mW (MAX. ) Standby: 5.5 µW (MAX. ).
  • Single +5 V power supply.
  • Fully-static operation.
  • TTL compatible I/O.
  • Three-state outputs.
  • Wide temperature range available LH5116H: -40 to +85°C.
  • Packages: 24-pin, 600-mil DIP 24-pin, 300-mil SK-DIP 24-pin, 450-mil SOP CMOS 16K (2K × 8) Static RAM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LH5116/H FEATURES • 2,048 × 8 bit organization • Access time: 100 ns (MAX.) • Power consumption: Operating: 220 mW (MAX.) Standby: 5.5 µW (MAX.) • Single +5 V power supply • Fully-static operation • TTL compatible I/O • Three-state outputs • Wide temperature range available LH5116H: -40 to +85°C • Packages: 24-pin, 600-mil DIP 24-pin, 300-mil SK-DIP 24-pin, 450-mil SOP CMOS 16K (2K × 8) Static RAM DESCRIPTION The LH5116/H are static RAMs organized as 2,048 × 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tOE).
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