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LH28F800BG-L - 8 M-bit (512 kB x 16) SmartVoltage Flash Memory

General Description

The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.

The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V.

Key Features

  • SmartVoltage technology.
  • 2.7 V, 3.3 V or 5 V VCC.
  • 2.7 V, 3.3 V, 5 V or 12 V VPP.
  • High performance read access time LH28F800BG-L85/BGH-L85.
  • 85 ns (5.0±0.25 V)/90 ns (5.0±0.5 V)/ 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V) LH28F800BG-L12/BGH-L12.
  • 120 ns (5.0±0.5 V)/130 ns (3.3±0.3 V)/ 150 ns (2.7 to 3.6 V).
  • Enhanced automated suspend options.
  • Word write suspend to read.
  • Block erase suspend to word write.
  • Block.

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Full PDF Text Transcription (Reference)

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LH28F800BG-L/BGH-L (FOR TSOP, CSP) LH28F800BG-L/BGH-L (FOR TSOP, CSP) DESCRIPTION The LH28F800BG-L/BGH-L flash memories with SmartVoltage technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications. The LH28F800BG-L/BGH-L can operate at VCC = 2.7 V and VPP = 2.7 V. Their low voltage operation capability realizes longer battery life and suits for cellular phone application. Their boot, parameter and main-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for portable terminals and personal computers. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.