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LH28F320S3TD-L10 - 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory

Description

The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations.

Features

  • Absolute protection with VPP = GND.
  • Flexible block locking.
  • Erase/write lockout during power transitions.
  • SRAM-compatible write interface.
  • User-configurable x8 or x16 operation.
  • High-density symmetrically-blocked architecture.
  • Sixty-four 64 k-byte erasable blocks.
  • Enhanced cycling capability.
  • 100 000 block erase cycles.
  • 3.2 million block erase cycles/bank.
  • Low power management.
  • Deep power.

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Datasheet Details

Part number LH28F320S3TD-L10
Manufacturer Sharp Corporation
File Size 291.40 KB
Description 32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory
Datasheet download datasheet LH28F320S3TD-L10 Datasheet
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LH28F320S3TD-L10 LH28F320S3TD-L10 DESCRIPTION The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications.
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