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A1013 - Silicon PNP Epitaxial Transistor

General Description

:The A1013 is designed for color TV class B sound output applications

Key Features

  • High voltage: VCEO=160V.
  • Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×260um Al Au 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symb.

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Datasheet Details

Part number A1013
Manufacturer Shanghai
File Size 178.32 KB
Description Silicon PNP Epitaxial Transistor
Datasheet download datasheet A1013 Datasheet

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Full PDF Text Transcription (Reference)

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A1013 A1013 Silicon PNP Epitaxial Transistor Description :The A1013 is designed for color TV class B sound output applications Features: ●High voltage: VCEO=160V ●Complementary to C2383 Chip Appearance Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base 1100um×1100um 210±20um 240um×240um Emitter 330um×260um Al Au 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector Saturation Voltage Symbol ICBO IEBO BVCBO BVCEO BVEBO hFE VCE(sat) Test Condition VCB=-150V, IE=0 VEB=-6V, IC=0 IC=-0.1mA IC=-10mA IE=-0.1mA VCE=-5V, IC=-200mA IC=-500mA, IB=-50mA -160 -160 -6.