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SMC8810W - Common-Drain Dual N-Channel MOSFET

Description

SMC8810 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced trench technology to provide excellent RDS(ON).

Features

  • VDS = 20V, ID = 7.6A RDS(ON)=14.0mΩ(Typ. )@VGS=4.5V RDS(ON)=14.5mΩ(Typ. )@VGS=4.0V RDS(ON)=15.5mΩ(Typ. )@VGS=3.2V RDS(ON)=17.8mΩ(Typ. )@VGS=2.5V RDS(ON)=24.5mΩ(Typ. )@VGS=1.8V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.

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Datasheet Details

Part number SMC8810W
Manufacturer Semtron
File Size 329.17 KB
Description Common-Drain Dual N-Channel MOSFET
Datasheet download datasheet SMC8810W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMC8810W Common-Drain Dual N-Channel MOSFET ■DESCRIPTION SMC8810 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology to provide excellent RDS(ON). These devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. ■PART NUMBER INFORMATION SMC 8810 W - TR G a b c de a : Company name. b : Product Serial number. c : Package code W:TSSOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS = 20V, ID = 7.6A RDS(ON)=14.0mΩ(Typ.)@VGS=4.5V RDS(ON)=14.5mΩ(Typ.)@VGS=4.0V RDS(ON)=15.5mΩ(Typ.)@VGS=3.2V RDS(ON)=17.8mΩ(Typ.)@VGS=2.5V RDS(ON)=24.5mΩ(Typ.)@VGS=1.
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