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SMC2355DSQ - Dual P-Channel MOSFET

General Description

SMC2355DSQ is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced trench technology devices are well suited for high efficiency fast switching applications.

a : Company name.

Key Features

  • VDS=-20V, ID=-3.5A RDS(ON)=60mΩ(Typ. )@VGS=-4.5V RDS(ON)=80mΩ(Typ. )@VGS=-2.5V RDS(ON)=110mΩ(Typ. )@VGS=-1.8V.
  • Fast switch.
  • 1.8V Low gate drive.

📥 Download Datasheet

Datasheet Details

Part number SMC2355DSQ
Manufacturer Semtron
File Size 282.77 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet SMC2355DSQ Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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■DESCRIPTION SMC2355DSQ is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications. ■PART NUMBER INFORMATION SMC 2355D SQ - TR G a b c de a : Company name. b : Product Serial number. c : Package code SQ: SOT-23-6L d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant SMC2355DSQ Dual P-Channel MOSFET ■FEATURES VDS=-20V, ID=-3.5A RDS(ON)=60mΩ(Typ.)@VGS=-4.5V RDS(ON)=80mΩ(Typ.)@VGS=-2.5V RDS(ON)=110mΩ(Typ.)@VGS=-1.8V ◆Fast switch ◆1.