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SMC2208ESC - Single N-Channel MOSFET

General Description

SMC2208E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package.

PART NUMBER

Key Features

  • VDS = 20V, ID = 0.8A RDS(ON) =210mΩ(Typ. )@VGS = 4.5V RDS(ON) =245mΩ(Typ. )@VGS = 2.5V RDS(ON) =310mΩ(Typ. )@VGS = 1.8V RDS(ON) =380mΩ(Typ. )@VGS = 1.5V RDS(ON) =615mΩ(Typ. )@VGS = 1.2V.
  • Fast switch.
  • Low gate drive.

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Datasheet Details

Part number SMC2208ESC
Manufacturer Semtron
File Size 361.64 KB
Description Single N-Channel MOSFET
Datasheet download datasheet SMC2208ESC Datasheet

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SMC2208ESC Single N-Channel MOSFET ■DESCRIPTION SMC2208E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. ■PART NUMBER INFORMATION SMC 2208 E SC - TR G a b cd e f a : Company name. b : Product Serial number. c : ESD d : Package code SC: SOT-523 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES VDS = 20V, ID = 0.8A RDS(ON) =210mΩ(Typ.)@VGS = 4.5V RDS(ON) =245mΩ(Typ.)@VGS = 2.5V RDS(ON) =310mΩ(Typ.)@VGS = 1.8V RDS(ON) =380mΩ(Typ.)@VGS = 1.5V RDS(ON) =615mΩ(Typ.)@VGS = 1.