• Part: PES060N04GT
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 342.26 KB
Download PES060N04GT Datasheet PDF
Semione
PES060N04GT
Description The PES060N04GT uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 40V, ID = 54A RDS(ON) < 4.6mΩ @ VGS=10V RDS(ON) < 8mΩ @ VGS=4.5V - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - Power Tools - Load Switch - DC-DC Converter Schematic diagram Marking and pin assignment Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Single Pulsed Avalanche Energy (L=0.1m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case RθJC DFN5x6-8L Rating 40 ±20 54 40 216 39 68 -55 To 150 Unit V V A A A W m J ℃ ℃/W .semi-one. Page 1 2024...