• Part: PE592120Q
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: Semione
  • Size: 635.56 KB
Download PE592120Q Datasheet PDF
Semione
PE592120Q
Description The PE592120Q uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS =135V, ID =120A RDS(ON) < 5.0mΩ @ VGS=10V - High Power and current handing capability - Lead free product is acquired Application - PWM applications - Load switch - Power management Schematic diagram Marking and pin assignment TO-220 Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=1.0m H) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID(TC=100℃) IDM PD EAS TJ,TSTG Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC Rating 135 ±20 120 89 480 375 2312 -55 To 175 Unit V V A A A W m J ℃ ℃/W .semi-one. Page 1 2021 Dec. v1.0 Electrical...