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PE592120Q - N-Channel Enhancement Mode Power MOSFET

Description

The PE592120Q uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =135V, ID =120A RDS(ON) < 5.0mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.

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Datasheet Details

Part number PE592120Q
Manufacturer Semione
File Size 635.56 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE592120Q Datasheet

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Full PDF Text Transcription

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N-Channel Enhancement Mode Power MOSFET Description The PE592120Q uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS =135V, ID =120A RDS(ON) < 5.0mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is acquired Application ● PWM applications ● Load switch ● Power management PE592120Q Schematic diagram Marking and pin assignment TO-220 Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous (TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation Avalanche Energy (L=1.
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