SKM200GBD123D1S - IGBT

Features

• MOS input (voltage controlled).
• N channel, Homogeneous Si.
• Low inductance case.
• Very low tail current with low temperature dependence.
• High short circuit capability, self limiting to 6.
• Icnom.
• Latch-up free.
• Fast & soft inverse CAL diodes8).
• Isolated copper baseplate using DCB Direct Copper Bonding Technology.
• Large clearance (13 mm) and creepage distances (20 mm). Typical.