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SEMiX603GAR066HDs - IGBT

Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • UL recognised file no. E63532 Typical.

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Full PDF Text Transcription

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SEMiX603GAR066HDs SEMiX® 3s Trench IGBT Modules SEMiX603GAR066HDs Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • Matrix Converter • Resonant Inverter • Current Source Inverter Remarks • Case temperature limited to TC=125°C max.
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