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SKR12 - DIODE

Features

  • high current density due to mesa technology.
  • high surge current.
  • compatible to thick wire bonding.
  • compatible to all standard solder processes Thermal Characteristics Symbol Tj Tstg Tsolder Tsolder Rth(j-s) 10 min. 5 min. soldered on 0,38 mm DCB, reference point on copper heatsink close to the chip 0.27 Conditions min. -40 -40 typ. max. 150 150 250 320 Unit °C °C °C °C K/W Typical.

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Datasheet Details

Part number SKR12
Manufacturer Semikron International
File Size 183.12 KB
Description DIODE
Datasheet download datasheet SKR12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKR 12,4 Qu bond Absolute Maximum Ratings Symbol VRRM IF(AV) i2t IFSM Tjmax Conditions Tj = 25 °C, R I = 0.2 mA Ts = 80 °C, T j = 150 °C Tj = 150 °C, 10 ms, sin 180° 10 ms sin 180° Tj = 25 °C Tj = 150 °C Values 1600 190 26500 3200 2300 150 Unit V A A2s A A °C DIODE IF(DC) = 235 A VRRM = 1600 V Size: 12,4 mm x 12,4 mm SKR 12,4 Qu bond Electrical Characteristics Symbol IR VF V(TO) rT trr Conditions Tj = 25 °C, V RRM Tj = 120 °C, VRRM Tj = 25 °C, F I = 160 A Tj = 125 °C, IF = 160 A Tj = 125 °C Tj = 125 °C Tj = 25 °C, ± 1 A min. typ. max. 0.2 1.1 Unit mA mA V V V mΩ µs 1 0.9 1.21 1.1 0.83 1.
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