The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SKM800GA125D
SEMITRANS® 4
SKM800GA125D
Features
• Homogeneous Si • NPT-IGBT • VCE(sat) with positive temperature
coefficient • High short circuit capability, self limiting
to 6 x IC
Typical Applications*
• Resonant inverters up to 100 kHz • Inductive heating • Electronic welders at fsw > 20 kHz
Remarks
• IDC ≤ 500 A limited by terminals • Take care of over-voltage caused by
stray inductances
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 150 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES tpsc Tj
VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS) Tstg
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
S
SKM800GA125D Datasheet
