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SKM400GB176DL3 - IGBT

Features

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  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability, self limiting to 6 x Icnom.
  • Insulated copper baseplate using aluminum nitride ceramic.
  • Large clearance (13mm) and creepage distance (20mm), to ground: 50mm Typical.

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Datasheet Details

Part number SKM400GB176DL3
Manufacturer Semikron International
File Size 603.54 KB
Description IGBT
Datasheet download datasheet SKM400GB176DL3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SKM400GB176DL3 SEMITRANS™ 9 Trench IGBT Modules SKM400GB176DL3 Features* • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Insulated copper baseplate using aluminum nitride ceramic • Large clearance (13mm) and creepage distance (20mm), to ground: 50mm Typical Applications • AC inverter drives • Mains 575 – 750 V AC • Public transport • Wind power Remarks • Terminals 1,4 – 2,5 – 3,6 need to be connected externally Absolute Maximum Ratings Symbol Conditions IGBT VCES IC Tj = 25 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C ICnom ICRM VGES tpsc Tj VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V Tj = 125 °C Inverse diode IF Tj = 150 °C Tc = 25 °C Tc = 80 °C IFRM IFSM tp = 10 ms, sin 180°, Tj = 25 °C Tj
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