Download SKM195GAL123D Datasheet PDF
SKM195GAL123D datasheet preview
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SKM195GAL123D Key Features

  • MOS input (voltage controlled)
  • N channel, Homogeneous Si
  • Very low tail current with low
  • High short circuit capability
  • Latch-up free
  • Fast & soft inverse CAL
  • Isolated copper baseplate
  • Large clearance (13 mm) and creepage distances (20 mm)

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SKM195GAL123D Description

Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= IC Tcase = 25/80 °C IFM= ICM Tcase = 25/80 °C;.

SKM195GAL123D Applications

  • Switching (not for linear use)