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SEMiX101GD12Vs
Absolute Maximum Ratings Symbol
IGBT VCES IC ICnom ICRM ICRM = 3xICnom VCC = 600 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 175 °C Tc = 25 °C Tc = 80 °C 1200 159 121 100 300 -20 ... 20 Tj = 125 °C 10 -40 ... 175 Tc = 25 °C Tc = 80 °C 121 91 100 IFRM = 3xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 300 550 -40 ... 175 Tterminal = 80 °C AC sinus 50Hz, t = 1 min 600 -40 ... 125 4000 V A A A A V µs °C A A A A A °C A °C V
Conditions
Values
Unit
SEMiX® 13
VGES tpsc Tj IF IFnom
Inverse diode
SEMiX101GD12Vs Features
• Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no.
SEMiX101GD12Vs Datasheet
