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SEMIX353GD176HDC - IGBT

Features

  • Homogeneous Si.
  • Trench = Trenchgate technology.
  • VCE(sat) with positive temperature coefficient.
  • UL recognised file no. E63532 Typical.

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Datasheet Details

Part number SEMIX353GD176HDC
Manufacturer Semikron International
File Size 400.01 KB
Description IGBT
Datasheet download datasheet SEMIX353GD176HDC Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMiX353GD176HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1700 353 251 225 450 -20 ... 20 10 -55 ... 150 428 289 225 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 1800 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX353GD176HDc www.DataSheet4U.com Tj = 150 °C IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no.
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