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SEMIX352GAR128DS - IGBT

Features

  • Homogeneous Si.
  • SPT = Soft-Punch-Through technology.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • UL recognised file no. E63532 Tj = 150 °C Typical.

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Datasheet Details

Part number SEMIX352GAR128DS
Manufacturer Semikron International
File Size 421.71 KB
Description IGBT
Datasheet download datasheet SEMIX352GAR128DS Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMiX352GAR128Ds Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V Tj = 125 °C VCES ≤ 1200 V VGES tpsc Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 377 268 200 400 -20 ... 20 10 -40 ... 150 Tc = 25 °C Tc = 80 °C 297 204 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 2000 -40 ... 150 Tc = 25 °C Tc = 80 °C 200 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 400 2000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A A A A A °C A °C V Conditions Values Unit SEMiX®2s SPT IGBT Modules SEMiX352GAR128Ds Tj Inverse diode IF IFnom IFRM IFSM Tj Freewheeling diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Tj = 150 °C Preliminary Data www.DataSheet4U.
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