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SEMIX302KD16S - Rectifier Diode Module

Features

  • Terminal height 17 mm.
  • Chips soldered directly to isolated substrate Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5.
  • 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IF = 900 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode 0.091 1.6 0.85 1.1 15 V V mΩ mA K/W K/W sin. 180 K/W K/W Conditions min. typ. max. Unit Typical.

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Datasheet Details

Part number SEMIX302KD16S
Manufacturer Semikron International
File Size 150.27 KB
Description Rectifier Diode Module
Datasheet download datasheet SEMIX302KD16S Datasheet

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Full PDF Text Transcription

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SEMiX302KD16s Absolute Maximum Ratings Symbol IFAV IFSM i2t Conditions Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C Values 300 240 8500 7500 361000 281000 1700 1600 -40 ... 130 -40 ... 125 Unit A A A A A2s A2s V V °C °C V V Recitifier Diode sin. 180° 10 ms 10 ms SEMiX 2s ® VRSM VRRM Tj Module Rectifier Diode Module SEMiX302KD16s Tstg Visol AC sinus 50Hz 1 min 1s 4000 4800 Features • Terminal height 17 mm • Chips soldered directly to isolated substrate Characteristics Symbol Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.5 0.045 5 5 5 * 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IF = 900 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode 0.091 1.6 0.85 1.
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