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SD3960 - Chip Type 2C3960 Geometry 0003 Polarity NPN

Download the SD3960 datasheet PDF. This datasheet also covers the SD3960F variant, as both devices belong to the same chip type 2c3960 geometry 0003 polarity npn family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics Parameter TA = 25oC Test conditions Min Max Unit BVCEO IC = 10.0 mA 12 --V dc BVCBO IC = 10 µA 20 --V dc BVEBO IE = 10.0 mA 4.5 --V dc ICEX VCE = 10 V, VEB = 2.0 V --5.0 nA hFE1 IC = 1.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SD3960F_SemicoaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SD3960
Manufacturer Semicoa Semiconductor
File Size 154.32 KB
Description Chip Type 2C3960 Geometry 0003 Polarity NPN
Datasheet download datasheet SD3960 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Data Sheet No. 2C3960 Chip Type 2C3960 Geometry 0003 Polarity NPN Generic Packaged Part: 2N3960 Chip type 2C3960 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for high-speed current-mode logic switching. Features: 2N3960, 2N3960UB, SD3960F, SQ3960, SQ3960F Mechanical Specifications Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base Al - 15 kÅ min. Au - 6.5 kÅ nom. 2.7 mils x 2.7 mils 2.7 mils x 2.7 mils 8 mils nominal 16 mils x 16 mils Silox Passivated Electrical Characteristics Parameter TA = 25oC Test conditions Min Max Unit BVCEO IC = 10.0 mA 12 --V dc BVCBO IC = 10 µA 20 --V dc BVEBO IE = 10.0 mA 4.5 --V dc ICEX VCE = 10 V, VEB = 2.