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SIM200D12SV3 - HALF-BRIDGE IGBT

Datasheet Summary

Features

  • rench gate + field stopper, using Infineon chip design.
  • 10µs Short circuit capability.
  • Low turn-off losses.
  • Short tail current for over 18KHz.
  • Positive VCE(on) temperature coefficient www. DataSheet4U. com.

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Datasheet preview – SIM200D12SV3

Datasheet Details

Part number SIM200D12SV3
Manufacturer SemiWell Semiconductor
File Size 516.17 KB
Description HALF-BRIDGE IGBT
Datasheet download datasheet SIM200D12SV3 Datasheet
Additional preview pages of the SIM200D12SV3 datasheet.

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Full PDF Text Transcription

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Preliminary SIM200D12SV3 VCES = 1200V Ic = 200A VCE(ON) typ. = 1.7V @ Ic = 200A “HALF-BRIDGE” IGBT MODULE Features ▪ rench gate + field stopper, using Infineon chip design ▪ 10µs Short circuit capability ▪ Low turn-off losses ▪ Short tail current for over 18KHz ▪ Positive VCE(on) temperature coefficient www.DataSheet4U.
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