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SemiWell Semiconductor
SFP840
N-Channel MOSFET
Features
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High ruggedness RDS(on) (Max 0.85 Ω )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability, High ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150°C)
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General Description
This Power MOSFET is produced using SemiWell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half bridge and full bridge resonant topolgy like a electronic lamp ballast.
SFP840 Datasheet
