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SM840S - 500V N-Channel MOSFET

Features

  • Low Intrinsic Capacitances.
  • Excellent Switching Characteristics.
  • Extended Safe Operating Area.
  • Unrivalled Gate Charge : 28 nC (Typ. ).
  • BVDSS=500V,ID=9A.
  • Lower RDS(on) : 0.75 Ω (Max) @VG=10V.
  • 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=10.

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Datasheet Details

Part number SM840S
Manufacturer SemiMOS
File Size 868.22 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet SM840S Datasheet
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Full PDF Text Transcription

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SM840S 500V N-Channel MOSFET TO-220 SM840S KONGSON Features □ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge : 28 nC (Typ.) □ BVDSS=500V,ID=9A □ Lower RDS(on) : 0.75 Ω (Max) @VG=10V □ 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 500 9.0 5.7 ±30 360 9.
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