SM4N60S-D - 600V N-Channel MOSFET

Download the SM4N60S-D datasheet PDF. This datasheet also covers the SM4N60S-I variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg=13.3nC (Typ. ).
BVDSS=600V,ID=4A.
RDS(on) : 2.3 Ω (Max) @VG=10V.
100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Volt.

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SM4N60S-D 600v n-channel mosfet by SemiMOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SM4N60S-I-SemiMOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SM4N60S-D
Manufacturer	SemiMOS
File Size	849.71 KB
Description	600V N-Channel MOSFET
Datasheet	SM4N60S-D Datasheet

Other Datasheets by SemiMOS

Part Number	Description
SM4N60S-I	600V N-Channel MOSFET
SM4N60S	600V N-Channel MOSFET
SM4N60C	600V N-Channel MOSFET
SM4N65S-D	650V N-Channel MOSFET
SM4N65S-I	650V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SM4N60S-I/SM4N60S-D 600V N-Channel MOSFET SM4N60S-I SM4N60S-D SM4N60S-I/SM4N60S-D KONGSON Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg=13.3nC (Typ.). □ BVDSS=600V,ID=4A □ RDS(on) : 2.3 Ω (Max) @VG=10V □ 100% Avalanche Tested TO‐251 TO‐252 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol VDSS ID VGS(TH) EAS IAR PD Tj Tstg TL Parameter Drain-Source Voltage Drain Current Gate Threshold Voltage Tj=25℃ Tj=100℃ Single Pulse Avalanche Energy (note1) Avalanche Current (note2) Power Dissipation (Tj=25℃) Junction Temperature(Max) Storage Temperature Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds Value 600 4 2.