SM30N10 - 100V N-Channel MOSFET

Key Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 31nC (Typ. ).
BVDSS=100V,ID= 30A.
RDS(on) : 0.07Ω (Max) @VG=10V.
100% Avalanche Tested Absolute Maximum Ratings.
(Tc=25℃ Unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipat.

SM30N10 100v n-channel mosfet by SemiMOS - Datasheet Preview

Datasheet Details

Part number	SM30N10
Manufacturer	SemiMOS
File Size	863.66 KB
Description	100V N-Channel MOSFET
Datasheet	SM30N10 Datasheet

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SM30N10 100V N-Channel MOSFET TO-220F SM30N10 100V N-Channel MOSFET Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 31nC (Typ.). □ BVDSS=100V,ID= 30A □ RDS(on) : 0.07Ω (Max) @VG=10V □ 100% Avalanche Tested Absolute Maximum Ratings* (Tc=25℃ Unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID (100℃) IDM PD EAS TJ,TSTG 1.Gate (G) 2.Drain (D) 3.