SM20N06 - 60V N-Channel MOSFET

Key Features

Low Intrinsic Capacitances.
Excellent Switching Characteristics.
Extended Safe Operating Area.
Unrivalled Gate Charge :Qg= 25.3nC (Typ. ).
BVDSS=60V,I D=20A.
RDS(on) : 0.035Ω (Max) @VG=10V.
100% Avalanche Tested 1 3 1.Gate (G) 2.Drain (D) 3.Source (S) Absolute Maximum Ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VDSS ID Drain-Source Voltage Drain Current 60 V TC=25℃ 20 A TC=100℃ 14 VGS(TH).

SM20N06 60v n-channel mosfet by SemiMOS - Datasheet Preview

Datasheet Details

Part number	SM20N06
Manufacturer	SemiMOS
File Size	905.69 KB
Description	60V N-Channel MOSFET
Datasheet	SM20N06 Datasheet

Other Datasheets by SemiMOS

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SM2N60S-I	600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

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SM20N06 60V N-Channel MOSFET TO-252 2 SM20N06 KONGSON 60V N-Channel MOSFET Features: □ Low Intrinsic Capacitances. □ Excellent Switching Characteristics. □ Extended Safe Operating Area. □ Unrivalled Gate Charge :Qg= 25.3nC (Typ.). □ BVDSS=60V,I D=20A □ RDS(on) : 0.035Ω (Max) @VG=10V □ 100% Avalanche Tested 1 3 1.Gate (G) 2.Drain (D) 3.