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HRS82N10K
HRS82N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested
August 2014
BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A
TO-220F
12 3
1.Gate 2. Drain 3.