HRLFS55N03K - N-Channel MOSFET

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Features

BVDSS = 30 V ID = 66 A Unrivalled Gate Charge : 50 nC (Typ. ) Lower RDS(ON) : 3.7 Pȍ (Typ. ) @VGS=10V Lower RDS(ON) : 4.7 Pȍ (Typ. ) @VGS=4.5V 100% Avalanche Tested 8DFN 3x3 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operati.

HRLFS55N03K n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HRLFS55N03K
Manufacturer	SemiHow
File Size	252.80 KB
Description	N-Channel MOSFET
Datasheet	HRLFS55N03K Datasheet

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HRLFS55N03K May 2016 HRLFS55N03K 30V N-Channel Trench MOSFET FEATURES BVDSS = 30 V ID = 66 A Unrivalled Gate Charge : 50 nC (Typ.) Lower RDS(ON) : 3.7 Pȍ (Typ.) @VGS=10V Lower RDS(ON) : 4.7 Pȍ (Typ.) @VGS=4.5V 100% Avalanche Tested 8DFN 3x3 1 Absolute Maximum Ratings TJ=25୅ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25୅ TC = 100୅ (Note 1) Single Pulsed Avalanche Energy (Note 2) Power Dissipation TC= 25୅ TA = 25୅ Operating and Storage Temperature Range 30 ρ20 66 42 198 300 28 1.67 -55 to +150 Units V V A A A mJ W W ୅ Thermal Resistance Characteristics Symbol Parameter RșJC RșJA Junction-to-Case Junction-to-Ambient (steady state) Typ.

Published: Dec 22, 2016 |