HRI82N10K - N-Channel MOSFET

SemiHow

Features

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 6.5 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A D2-PAK I2-PAK HRW82N10K HRI82N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain C.

HRI82N10K n-channel mosfet by SemiHow - Datasheet Preview

Datasheet Details

Part number	HRI82N10K
Manufacturer	SemiHow
File Size	190.57 KB
Description	N-Channel MOSFET
Datasheet	HRI82N10K Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by SemiHow

Part Number	Description
HRI105N15H	N-Channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HRW82N10K_HRI82N10K HRW82N10K / HRI82N10K 100V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 6.5 Pȍ (Typ.) @VGS=10V 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A D2-PAK I2-PAK HRW82N10K HRI82N10K 1.Gate 2. Drain 3.

Published: Apr 13, 2017 |