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HGA40N120FV - N-Channel MOSFET

Features

  •  1200V Field Stop Trench Technology  Low Saturation Voltage  High Switching Frequency  Very Soft, Fast Recovery Anti-parallel diode.

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Datasheet Details

Part number HGA40N120FV
Manufacturer SemiHow
File Size 749.96 KB
Description N-Channel MOSFET
Datasheet download datasheet HGA40N120FV Datasheet

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Full PDF Text Transcription

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HGA40N120FV HGA40N120FV 1200V Field Stop Trench IGBT FEATURES  1200V Field Stop Trench Technology  Low Saturation Voltage  High Switching Frequency  Very Soft, Fast Recovery Anti-parallel diode APPLICATION  Welding Converters  Uninterruptible Power Supply  General Purpose Inverters March 2015 VCES = 1200 V IC = 40 A VCE(sat) typ = 2.
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