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HFU630A - 200V N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-So.

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Datasheet Details

Part number HFU630A
Manufacturer SemiHow
File Size 405.76 KB
Description 200V N-Channel MOSFET
Datasheet download datasheet HFU630A Datasheet

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Full PDF Text Transcription

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HFD630A_HFU630A August 2015 HFD630A / HFU630A 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 9.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630A 1 2 3 HFU630A 1.Gate 2. Drain 3.
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