Datasheet4U Logo Datasheet4U.com

HFU1N70 - N-Channel MOSFET

Features

  •  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 14.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N70 1 2 3 HFU1N70 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv.

📥 Download Datasheet

Datasheet Details

Part number HFU1N70
Manufacturer SemiHow
File Size 695.58 KB
Description N-Channel MOSFET
Datasheet download datasheet HFU1N70 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFU70N03V N-Channel Enhancement Mode Field Effect Transistor HUASHAN ELECTRONIC

Other Datasheets by SemiHow

Part Number Description
HFU1N60 N-Channel MOSFET
HFU1N60F 600V N-Channel MOSFET
HFU1N60S N-Channel MOSFET
HFU1N65 N-Channel MOSFET
HFU1N65S N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFD1N70 / HFU1N70 Dec 2008 HFD1N70 / HFU1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 4.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 14.0 Ω (Typ.) @VGS=10V  100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD1N70 1 2 3 HFU1N70 1.Gate 2. Drain 3.
Published: |