Datasheet4U Logo Datasheet4U.com

HFT1N60S - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain C.

📥 Download Datasheet

Datasheet Details

Part number HFT1N60S
Manufacturer SemiHow
File Size 305.01 KB
Description N-Channel MOSFET
Datasheet download datasheet HFT1N60S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFT150-28 NPN SILICON RF POWER TRANSISTOR ASI
HFT150-50 N-Channel Enhancement Mode HF POWER MOSFET ASI
HFT012 12-bit SAR type Analog-to-Digital converter Kingbright Corporation
HFTC-16 Ceramic High Pass Filter Mini-Circuits
HFTC-19 Ceramic High Pass Filter Mini-Circuits

Other Datasheets by SemiHow

Part Number Description
HFT1N60F N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFT1N60S Dec 2009 HFT1N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 0.2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 3.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested SOT-223 2 3 1 1.Gate 2. Drain 3.
Published: |