Datasheet4U Logo Datasheet4U.com

HFS7N80 - 800V N-Channel MOSFET

Features

  • ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ. ) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ. ) @VGS=10V 100% Avalanche Tested TC=25୅ unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG.

📥 Download Datasheet

Datasheet Details

Part number HFS7N80
Manufacturer SemiHow
File Size 214.36 KB
Description 800V N-Channel MOSFET
Datasheet download datasheet HFS7N80 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFS15 SOLID STATE RELAY HF
HFS2 MOS RELAY HF
HFS20 SOLID STATE RELAY HF
HFS21 THREE-PHASE MOTOR CONTROL MODULE HF
HFS22 1GBT MODULE HF

Other Datasheets by SemiHow

Part Number Description
HFS7N60 600V N-Channel MOSFET
HFS730 400V N-Channel MOSFET
HFS730F N-Channel MOSFET
HFS730S N-Channel MOSFET
HFS730U N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFS7N80 July 2005 BVDSS = 800 V HFS7N80 800V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ (Typ.) ) Extended Safe Operating Area Lower RDS(ON) : 1.55 ȍ (Typ.) @VGS=10V 100% Avalanche Tested TC=25୅ unless otherwise specified RDS(on) typ = 1.55 ȍ ID = 7.0 A TO-220F 1 2 3 1.Gate 2. Drain 3.
Published: |