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HFD630 - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630 1 2 3 HFU630 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-S.

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Datasheet Details

Part number HFD630
Manufacturer SemiHow
File Size 162.20 KB
Description N-Channel MOSFET
Datasheet download datasheet HFD630 Datasheet

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Full PDF Text Transcription

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HFD630_HFU630 Dec 2012 HFD630 / HFU630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 7.2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD630 1 2 3 HFU630 1.Gate 2. Drain 3.
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