Datasheet4U Logo Datasheet4U.com

HFD2N90 - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 17 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N90 1 2 3 HFU2N90 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-.

📥 Download Datasheet

Datasheet Details

Part number HFD2N90
Manufacturer SemiHow
File Size 249.33 KB
Description N-Channel MOSFET
Datasheet download datasheet HFD2N90 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HFD2 SUBMINIATURE DIP RELAY ETC
HFD2 SUMINIATURE DIP RELAY Hongfa
HFD23 RELAY Hongfa Technology
HFD27 Subminiature DIP Relay Hongfa
HFD27-003-H Subminiature DIP Relay Hongfa

Other Datasheets by SemiHow

Part Number Description
HFD2N60 N-Channel MOSFET
HFD2N60S 600V N-Channel MOSFET
HFD2N60U N-Channel MOSFET
HFD2N65F 600V N-Channel MOSFET
HFD2N65S N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
HFD2N90_HFU2N90 Feb 2014 HFD2N90/HFU2N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 2.0 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 17 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N90 1 2 3 HFU2N90 1.Gate 2. Drain 3.
Published: |