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HCH20NT60V - N-Channel MOSFET

Features

  • ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 54 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.17 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage.

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Datasheet Details

Part number HCH20NT60V
Manufacturer SemiHow
File Size 370.88 KB
Description N-Channel MOSFET
Datasheet download datasheet HCH20NT60V Datasheet

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HCH20NT60V Apr 2014 HCH20NT60V 600V N-Channel Super Junction MOSFET BVDSS = 600 V RDS(on) typ = 0.17 ȍ ID = 20 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 54 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.17 ȍ 7S #9GS=10V ‰ 100% Avalanche Tested ‰ RoHS Compliant TO-3P 1 2 3 1.Gate 2. Drain 3.
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